On the morning of November 3, 2023, under the witness of Shanghai Juyuan Core Integrated Circuit Industry Equity Investment Fund Center, our company and Jingtong Semiconductor (Shenzhen) Co., Ltd. held a strategic cooperation signing ceremony for GaN project in Changzhou. Mr. Yang Senmao, Chairman of Changzhou Galaxy Century Microelectronics Co., LTD., Mr. Liu Jun, general manager of Changzhou Galaxy Century Microelectronics Co., LTD., and Mr. Liu Dan, general manager of Jingtong Semiconductor (Shenzhen) Co., Ltd. attended the signing ceremony.
      The two sides agreed that gallium nitride and silicon carbide are the two “fronts” of the third generation of semiconductors, which have high frequency, high efficiency, high power, high pressure resistance, high temperature resistance, and strong radiation resistance. Nowadays, China’s gallium nitride industry is developing rapidly, the localization of the industrial chain is becoming more and more perfect, and a number of domestic enterprises have gallium nitride wafer manufacturing capacity. With the outbreak of new downstream applications, and the continuous breakthrough of gallium nitride substrate preparation technology, gallium nitride devices are expected to continue to increase in volume, and will become one of the key technologies for cost reduction and efficiency, sustainable green development.
      Galaxy Micro is committed to becoming a leading enterprise in the semiconductor discrete device industry, and the company’s recent development focus is the third generation of semiconductor power devices, with rich customer resources. This cooperation with Jingtong can speed up the industrialization development process of gallium nitride products, and it is believed that through the strategic cooperation between the two parties, gallium nitride devices can be brought to the market soon.
      After the signing ceremony, the leaders of the two companies took a group photo.